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TPC8403 Arkusz danych(PDF) 3 Page - Toshiba Semiconductor |
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TPC8403 Arkusz danych(HTML) 3 Page - Toshiba Semiconductor |
3 / 11 page TPC8403 2006-11-13 3 P-channel Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-OFF current IDSS VDS = −30 V, VGS = 0 V ⎯ ⎯ −10 μA V (BR) DSS ID = −10 mA, VGS = 0 V −30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = −10 mA, VGS = 20 V −15 ⎯ ⎯ V Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −1.0 ⎯ −2.2 V VGS = −4.5 V, ID = −2.2 A ⎯ 66 90 Drain-source ON resistance RDS (ON) VGS = −10 V, ID = −2.2 A ⎯ 45 55 m Ω Forward transfer admittance |Yfs| VDS = −10 V, ID = −2.2 A 3.1 6.2 ⎯ S Input capacitance Ciss ⎯ 940 ⎯ Reverse transfer capacitance Crss ⎯ 270 ⎯ Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 390 ⎯ pF Rise time tr ⎯ 13 ⎯ Turn-ON time ton ⎯ 21 ⎯ Fall time tf ⎯ 25 ⎯ Switching time Turn-OFF time toff Duty <= 1%, tw = 10 μs ⎯ 73 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 18 ⎯ Gate-source charge 1 Qgs1 ⎯ 4 ⎯ Gate-drain (“miller”) charge Qgd VDD ∼− −24 V, VGS = −10 V, ID = −4.5 A ⎯ 4 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ −18 A Forward voltage (diode) VDSF IDR = −4.5 A, VGS = 0 V ⎯ ⎯ 1.2 V RL = 6.8 Ω VDD ∼− −15 V −10 V VGS 0 V ID = −2.2 A VOUT |
Podobny numer części - TPC8403_06 |
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Podobny opis - TPC8403_06 |
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