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TPC8009-H Arkusz danych(PDF) 6 Page - Toshiba Semiconductor |
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TPC8009-H Arkusz danych(HTML) 6 Page - Toshiba Semiconductor |
6 / 7 page TPC8009-H 2006-11-16 6 rth − tw Safe Operating Area Pulse width tw (s) Drain-source voltage VDS (V) 0.01 0.01 0.1 1 10 100 0.1 1 10 100 *: Single – pulse Ta = 25°C Curves must be derated linearly with increase in temperature. ID max (pulse)* 10 ms* t =1 ms* VDSS max 0.1 0.001 0.01 0.1 10 100 1000 1 100 1000 Single pulse 1 (2) 10 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (1) |
Podobny numer części - TPC8009-H_06 |
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Podobny opis - TPC8009-H_06 |
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