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TPC8112 Arkusz danych(PDF) 3 Page - Toshiba Semiconductor

Numer części TPC8112
Szczegółowy opis  Lithium Ion Applications Notebook PC Applications Portable Equipment Applications
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC8112 Arkusz danych(HTML) 3 Page - Toshiba Semiconductor

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TPC8112
2006-11-15
3
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
µA
Drain cut-OFF current
IDSS
VDS = −30 V, VGS = 0 V
−10
µA
V (BR) DSS
ID = −10 mA, VGS = 0 V
−30
Drain-source breakdown voltage
V (BR) DSX
ID = −10 mA, VGS = 20 V
−15
V
Gate threshold voltage
Vth
VDS = −10 V, ID = −1 mA
−0.8
−2.0
V
VGS = −4 V, ID = −6.5 A
9.0
14
Drain-source ON resistance
RDS (ON)
VGS = −10 V, ID = −6.5 A
5.0
6.0
m
Forward transfer admittance
|Yfs|
VDS = −10 V, ID = −6.5 A
15.5
31
S
Input capacitance
Ciss
5880
Reverse transfer capacitance
Crss
1000
Output capacitance
Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
1050
pF
Rise time
tr
11
Turn-ON time
ton
22
Fall time
tf
110
Switching time
Turn-OFF time
toff
Duty <= 1%, tw = 10 µs
395
ns
Total gate charge
(gate-source plus gate-drain)
Qg
130
Gate-source charge 1
Qgs1
10
Gate-drain (“miller”) charge
Qgd
VDD ∼− −24 V, VGS = 10 V,
ID = −13 A
30
nC
Source-Drain Ratings and Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse
current
Pulse
(Note 1)
IDRP
−52
A
Forward voltage (diode)
VDSF
IDR = −13 A, VGS = 0 V
1.2
V
VDD ∼− −15 V
0 V
VGS
−10 V
ID = −6.5 A
VOUT


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