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74HCT08DTR2G Arkusz danych(PDF) 2 Page - ON Semiconductor

Numer części 74HCT08DTR2G
Szczegółowy opis  Quad 2-Input AND Gate With LSTTL?묬ompatible Inputs High?뭁erformance Silicon?묰ate CMOS
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Producent  ONSEMI [ON Semiconductor]
Strona internetowa  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

74HCT08DTR2G Arkusz danych(HTML) 2 Page - ON Semiconductor

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74HCT08
http://onsemi.com
2
ORDERING INFORMATION
Device
Package
Shipping
74HCT08DR2G
SOIC−14
(Pb−Free)
2500/Tape & Reel
74HCT08DR2GH
SOIC−14
(Halide−Free)
74HCT08DTR2G
TSSOP−14*
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
Vin
DC Input Voltage (Referenced to GND)
– 0.5 to + 7.0
V
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Iin
DC Input Current, per Pin
±20
mA
Iout
DC Output Current, per Pin
±25
mA
ICC
DC Supply Current, VCC and GND Pins
±50
mA
PD
Power Dissipation in Still Air,
SOIC Package†
TSSOP Package†
500
450
mW
Tstg
Storage Temperature
– 65 to + 150
_C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
SOIC or TSSOP Package
260
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage (Referenced to GND)
4.5
5.5
V
Vin
DC Input Voltage (Referenced to GND)
0
5.5
V
Vout
DC Output Voltage (Referenced to GND)
0
VCC
V
TA
Operating Temperature, All Package Types
−55
+125
_C
tr, tf
Input Rise and Fall Time
VCC = 2.0 V
(Figure 1)
VCC = 4.5 V
VCC = 6.0 V
0
0
0
1000
500
400
ns
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.


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