BCP69T1 datasheet(2/4 Pages) ONSEMI

Numer części	BCP69T1

Szczegółowy opis	PNP Silicon Epitaxial Transistor

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BCP69T1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristics

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (IC = −100 mAdc, IE = 0)

V(BR)CES

−25

−

Vdc

Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0)

V(BR)CEO

−20

−

Vdc

Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0)

V(BR)EBO

−5.0

−

Vdc

Collector−Base Cutoff Current (VCB = −25 Vdc, IE = 0)

ICBO

−

−10

mAdc

Emitter−Base Cutoff Current (VEB = −5.0 Vdc, IC = 0)

IEBO

−

−10

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = −5.0 mAdc, VCE = −10 Vdc)

(IC = −500 mAdc, VCE = −1.0 Vdc)

(IC = −1.0 Adc, VCE = −1.0 Vdc)

hFE

50

85

60

−

375

−

Collector−Emitter Saturation Voltage (IC = −1.0 Adc, IB = −100 mAdc)

VCE(sat)

−

−0.5

Vdc

Base−Emitter On Voltage (IC = −1.0 Adc, VCE = −1.0 Vdc)

VBE(on)

−

−1.0

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = −10 mAdc, VCE = −5.0 Vdc)

fT

−

60

−

MHz

Podobny numer części - BCP69T1

Producent	Numer części	Arkusz danych	Szczegółowy opis
Motorola, Inc	BCP69T1	71Kb / 4P	MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT
ON Semiconductor	BCP69T1G	132Kb / 4P	PNP Silicon Epitaxial Transistor November, 2011 ??Rev. 11
ON Semiconductor	BCP69T1G	132Kb / 4P	PNP Silicon Epitaxial Transistor November, 2011 ??Rev. 11

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Unisonic Technologies	2SA1300	110Kb / 3P	PNP EPITAXIAL SILICON TRANSISTOR
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