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BCW68GLT3G Arkusz danych(PDF) 1 Page - ON Semiconductor

Numer części BCW68GLT3G
Szczegółowy opis  General Purpose Transistor PNP Silicon
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Producent  ONSEMI [ON Semiconductor]
Strona internetowa  http://www.onsemi.com
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© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 5
1
Publication Order Number:
BCW68GLT1/D
BCW68GLT1G
General Purpose Transistor
PNP Silicon
Features
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−EmitterVoltage
VCEO
−45
Vdc
Collector−Base Voltage
VCBO
−60
Vdc
Emitter−Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
−800
mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to
stresses above the Recommended Operating Conditions may affect device
reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
−55 to +150
°C
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in 99.5% alumina.
SOT−23
CASE 318
STYLE 6
http://onsemi.com
DG
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
MARKING DIAGRAM
1
2
3
Device
Package
Shipping
ORDERING INFORMATION
BCW68GLT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DG MG
G
COLLECTOR
3
1
BASE
2
EMITTER
(Note: Microdot may be in either location)
BCW68GLT3G
SOT−23
(Pb−Free)
10000 / Tape & Reel
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.


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