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MMSF3P02HDR2 Arkusz danych(PDF) 1 Page - ON Semiconductor |
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1 / 8 page Publication Order Number: MMSF3P02HD/D © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 7 1 MMSF3P02HD Preferred Device Power MOSFET 3 Amps, 20 Volts P−Channel SO−8 These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. MiniMOS t devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc−dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. Features • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive − Can Be Driven by Logic ICs • Miniature SO−8 Surface Mount Package − Saves Board Space • Diode Is Characterized for Use In Bridge Circuits • Diode Exhibits High Speed, With Soft Recovery • IDSS Specified at Elevated Temperature • Avalanche Energy Specified • Mounting Information for SO−8 Package Provided • Pb−Free Package is Available MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 20 Vdc Drain−to−Gate Voltage (RGS = 1.0 MW) VDGR 20 Vdc Gate−to−Source Voltage − Continuous VGS ± 20 Vdc Drain Current − Continuous @ TA = 25°C Drain Current − Continuous @ TA = 100°C Drain Current − Single Pulse (tp ≤ 10 ms) ID ID IDM 5.6 3.6 30 Adc Apk Total Power Dissipation @ TA = 25°C (Note 2) PD 2.5 W Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 20 Vdc, VGS = 5.0 Vdc, Peak IL = 9.0 Apk, L = 14 mH, RG = 25 W) EAS 567 mJ Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 50 °C/ W Maximum Lead Temperature for Soldering Purposes, 1/8 ″ from case for 10 seconds TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Negative sign for P−Channel device omitted for clarity. 2. Mounted on 2 ″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max. D S G P−Channel N−C 1 2 3 4 8 7 6 5 Source Source Gate Drain Drain Drain Drain 3 AMPERES, 20 VOLTS RDS(on) = 75 mW Device Package Shipping† ORDERING INFORMATION MMSF3P02HDR2 SO−8 2500 Tape & Reel PIN ASSIGNMENT Preferred devices are recommended choices for future use and best overall value. http://onsemi.com MMSF3P02HDR2G SO−8 (Pb−Free) 2500 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. SO−8 CASE 751 STYLE 13 MARKING DIAGRAM S3P02 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) S3P02 AYWW G G 1 8 1 8 |
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