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ADS1675 Arkusz danych(PDF) 2 Page - Texas Instruments |
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ADS1675 Arkusz danych(HTML) 2 Page - Texas Instruments |
2 / 36 page ADS1675 SBAS416D – DECEMBER 2008 – REVISED AUGUST 2010 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. PACKAGE/ORDERING INFORMATION For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the device product folder at ti.com. ABSOLUTE MAXIMUM RATINGS (1) Over operating free-air temperature range, unless otherwise noted. PARAMETER ADS1675 UNIT AVDD to AGND –0.3 to +5.5 V DVDD to DGND –0.3 to +3.6 V AGND to DGND –0.3 to +0.3 V Momentary 100 mA Input current Continuous 10 mA Analog I/O to AGND –0.3 to AVDD +0.3 V Digital I/O to DGND –0.3 to DVDD +0.3 V Maximum junction temperature +150 °C Operating temperature range –40 to +85 °C Storage temperature range –60 to +150 °C (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. 2 Submit Documentation Feedback Copyright © 2008–2010, Texas Instruments Incorporated Product Folder Link(s): ADS1675 |
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