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DAC1408D650_1008 Arkusz danych(PDF) 10 Page - NXP Semiconductors

Numer części DAC1408D650_1008
Szczegółowy opis  Dual 14-bit DAC up to 650 Msps 2, 4 or 8 interpolating
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Producent  NXP [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo NXP - NXP Semiconductors

DAC1408D650_1008 Arkusz danych(HTML) 10 Page - NXP Semiconductors

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DAC1408D650
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Preliminary data sheet
Rev. 02 — 11 August 2010
10 of 98
NXP Semiconductors
DAC1408D650
DAC1408D; up to 650 Msps; 2
×, 4× or 8× interpolating with JESD204A
[1]
D = guaranteed by design; C = guaranteed by characterization; I = 100 % industrially tested.
[2]
CLKINP/CLKINN inputs are at differential LVDS levels. An external termination resistor with a value of between 80
Ω and 120 Ω (see
Figure 16) should be connected across the pins.
[3]
|V
gpd| represents the ground potential difference voltage. This is the voltage that results from current flowing through the finite resistance
and the inductance between the receiver and the driver circuit ground voltage.
[4]
Vin_p and Vin_n inputs are differential CML inputs. There are terminated internally to Vtt via 50 Ω (see Figure 4).
[5]
SYNC_OUTP/SYNC_OUTN outputs are differential LVDS outputs. They must be terminated by a resistor with a value of between 80
Ω
and 120
Ω.
[6]
IMD3 rejection with
−6 dBFs/tone.
SFDRRBW
restricted bandwidth
spurious-free dynamic
range
fs =640 Msps;
4
× interpolation;
fo = 133 MHz at −1 dBFS;
BW = 100 MHz
I-
80
-
dBc
fs =640 Msps;
4
× interpolation;
fo = 133 MHz at −1 dBFS;
BW = 20 Mhz
C-
84
-
dBc
IMD3
third-order
intermodulation
distortion
fo1 =95MHz; fo2 =97MHz;
fs =640 Msps;
4
× interpolation
C
[6] -79
dBc
fo1 = 153.1 MHz;
fo2 = 154.1 MHz;
fs =640 Msps;
4
× interpolation
I
[6] -76
-
dBc
fo1 = 137 MHz;
fo2 = 143 MHz;
fs =640 Msps;
4
× interpolation
C
[6] -76
-
dBc
ACPR
adjacent channel
power ratio
NCO on;
4× interpolation; f
s = 640 Msps; fo =96 MHz
1 carrier; BW = 5 MHz
C
-
72
-
dB
2 carriers; BW = 10 MHz
C
-
72
-
dB
4 carriers; BW = 20 MHz
C
-
69
-
dB
NCO on; 4
× interpolation; f
s =640 Msps; fo = 133MHz
1 carrier; BW = 5 MHz
C
-
71
-
dB
2 carriers; BW = 10 MHz
C
-
71
-
dB
4 carriers; BW = 20 MHz
C
-
68
-
dB
NSD
noise spectral density
fs =640 Msps;
4
× interpolation;
fo = 133 MHz at 0 dBFS
I-
−155
-
dBc/Hz
Table 5.
Characteristics …continued
VDDA(1V8) =VDDD = 1.7 V to 1.9 V; VDDA(3V3) = 3.0 V to 3.6 V; AGND and GND are shorted together; Tamb = 40 °C to +85 °C;
typical values measured at VDDA(1V8) =VDDD =1.8 V; VDDA(3V3) =3.3 V; Tamb =+25 °C; RL =50 Ω; IO(fs) = 20 mA; maximum
sample rate; PLL off unless otherwise specified.
Symbol
Parameter
Conditions
Test[1]
Min
Typ
Max
Unit


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