2SD1898 datasheet(2/4 Pages) ROHM

Numer części	2SD1898

Szczegółowy opis	Power Transistor (80V, 1A)

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Producent	ROHM [Rohm]

Strona internetowa	http://www.rohm.com

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2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F

Transistors

!Absolute maximum ratings

(Ta=25

°C)

Parameter

Symbol

Limits

Unit

Collector-base voltage

VCBO

100

V

Collector-emitter voltage

VCEO

80

V

Emitter-base voltage

VEBO

5V

Collector current

IC

1

A (DC)

2

A (Pulse)

∗1

Junction temperature

Tj

150

˚C

Storage temperature

Tstg

−55∼+150

˚C

Collector power

dissipation

PC

0.5

2

∗2

1

∗3

10

0.3

1

1.2

W

W (Tc=25˚C)

W

W (Tc=25˚C)

∗1 Pw=20ms, duty=1 / 2

∗2 Printed circuit board 1.7mm thick, collector copper plating 1cm2 or larger.

∗3 When mounted on a 40×40×0.7mm ceramic board.

5

2SD1898

2SD1733

2SD1768S

2SD1863

2SD1381F

!Electrical characteristics

(Ta=25

°C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current

transfer ratio

Transition frequency

Output capacitance

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

VCE(sat)

hFE

fT

Cob

Min.

100

80

5

−

180

2SD1863

2SD1733, 2SD1898

2SD1768S

2SD1381F

−

0.15

−

100

20

−

1

0.4

390

−

VIC

=50

µA

IC

=1mA

IE

=50

µA

VCB

=80V

VEB

=4V

IC/IB

=500mA/20mA

VCE

=10V, IE=

−50mA, f=100MHz

VCE

=3V, IC=0.5A

∗

VCB

=10V, IE=0A, f=1MHz

V

µA

V

−

82

−

390

−

120

−

390

−

82

−

270

−

MHz

pF

Typ.

Max.

Unit

Conditions

* Measured using pulse current

Podobny numer części - 2SD1898

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Weitron Technology	2SD1898	112Kb / 4P	Epitaxial Planar NPN Transistors
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Podobny opis - 2SD1898

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2SD1898 Arkusz danych(PDF) 2 Page - Rohm

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