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KM416C256D Arkusz danych(PDF) 1 Page - Samsung semiconductor |
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KM416C256D Arkusz danych(HTML) 1 Page - Samsung semiconductor |
1 / 8 page KM416C256D, KM416V256D CMOS DRAM This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), access time (-5,-6,-7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 256Kx16 fast page mode DRAM family is fabricated using Samsung's advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines. ¡Ü Part Identification - KM416C256D/DL (5V, 512K Ref.) - KM416V256D/DL (3.3V, 512K Ref.) ¡Ü Fast Page Mode operation ¡Ü 2 CAS Byte/Wrod Read/Write operation ¡Ü CAS-before-RAS refresh capability ¡Ü RAS-only and Hidden refresh capability ¡Ü Self-refresh capability (L-ver only) ¡Ü TTL(5V)/LVTTL(3.3V) compatible inputs and outputs ¡Ü Early Write or output enable controlled write ¡Ü JEDEC Standard pinout ¡Ü Available in 40-pin SOJ 400mil and44(40)-pin TSOP(II) 400mil packages ¡Ü Triple +5V¡¾10% power supply(5V product) ¡Ü Triple +3.3V¡¾0.3V power supply(3.3V product) Control Clocks VBB Generator Refresh Timer Refresh Control Refresh Counter Row Address Buffer Col. Address Buffer Row Decoder Column Decoder Lower Data out Buffer RAS UCAS LCAS W Vcc Vss DQ0 to DQ7 A0 . . A8 Memory Array 262,144 x16 Cells SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION FEATURES FUNCTIONAL BLOCK DIAGRAM ¡Ü Refresh Cycles Part NO. VCC Refresh cycle Refresh period Normal L-ver C256D 5V 512K 8ms 128ms V256D 3.3V ¡Ü Performance Range: Speed tRAC tCAC tRC tPC Remark -5 50ns 15ns 90ns 35ns 5V only -6 60ns 15ns 10ns 40ns 5V/3.3V -7 70ns 20ns 130ns 45ns 5V/3.3V ¡Ü Active Power Dissipation Speed 3.3V(512 Ref.) 5V(512 Ref.) -5 - 605 -6 325 495 -7 290 440 Unit : mW Upper Data in Buffer Upper Data out Buffer Lower Data in Buffer DQ8 to DQ15 OE |
Podobny numer części - KM416C256D |
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Podobny opis - KM416C256D |
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