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KM416V1200C Arkusz danych(PDF) 8 Page - Samsung semiconductor |
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KM416V1200C Arkusz danych(HTML) 8 Page - Samsung semiconductor |
8 / 34 page KM416C1000C, KM416C1200C CMOS DRAM KM416V1000C, KM416V1200C tCWD is referenced to the later CAS falling edge at word read-modify-write cycle. tCWL is specified from W falling edge to the earlier CAS rising edge. tCSR is referenced to the earlier CAS falling edge before RAS transition low. tCHR is referenced to the later CAS rising edge after RAS transition low. tCSR tCHR RAS LCAS UCAS 16. 15. 14. 13. tDS, tDH is independently specified for lower byte DQ(0-7), upper byte DQ(8-15) If tRASS ≥100us, then RAS precharge time must use tRPS instead of tRP. For RAS-only refresh and burst CAS-before-RAS refresh mode, 4096(4K)/1024(1K) cycles of burst refresh must be executed within 64ms/16ms before and after self refresh, in order to meet refresh specification. For distributed CAS-before-RAS with 15.6us interval CAS-before-RAS refresh should be executed with in 15.6us immediately before and after self refresh in order to meet refresh specification. 17. 18. 19. 20. |
Podobny numer części - KM416V1200C |
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Podobny opis - KM416V1200C |
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