KM416C4100B datasheet(7/35 Pages) SAMSUNG

Numer części	KM416C4100B

Szczegółowy opis	4M x 16bit CMOS Dynamic RAM with Fast Page Mode

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Producent	SAMSUNG [Samsung semiconductor]

Strona internetowa	http://www.samsung.com/Products/Semiconductor

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KM416C4000B, KM416C4100B

CMOS DRAM

TEST MODE CYCLE

Parameter

Symbol

-45

-5

-6

Units

Note

Min

Max

Min

Max

Min

Max

Random read or write cycle time

tRC

85

95

115

ns

Read-modify-write cycle time

tRWC

120

138

160

ns

Access time from RAS

tRAC

50

55

65

ns

3,4,10,12

Access time from CAS

tCAC

17

18

20

ns

3,4,5,12

Access time from column address

tAA

28

30

35

ns

3,10,12

RAS pulse width

tRAS

50

10K

55

10K

65

10K

ns

CAS pulse width

tCAS

17

10K

18

10K

20

10K

ns

RAS hold time

tRSH

17

18

20

ns

CAS hold time

tCSH

50

55

65

ns

Column Address to RAS lead time

tRAL

28

30

35

ns

CAS to W delay time

tCWD

37

41

43

ns

7

RAS to W delay time

tRWD

72

78

88

ns

7

Column Address to W delay time

tAWD

48

53

58

ns

7

Fast Page mode cycle time

tPC

36

40

45

ns

Fast Page mode read-modify-write cycle time

tPRWC

75

81

90

ns

RAS pulse width (Fast Page cycle)

tRASP

50

200K

55

200K

65

200K

ns

Access time from CAS precharge

tCPA

31

35

40

ns

3

OE access time

tOEA

17

18

20

ns

OE to data delay

tOED

17

18

ns

OE command hold time

tOEH

17

18

20

ns

( Note 11 )

Podobny numer części - KM416C4100B

Producent	Numer części	Arkusz danych	Szczegółowy opis
Samsung semiconductor	KM416C4100C	901Kb / 35P	4M x 16bit CMOS Dynamic RAM with Fast Page Mode

More results

Podobny opis - KM416C4100B

Producent	Numer części	Arkusz danych	Szczegółowy opis
Samsung semiconductor	KM416V4000B	767Kb / 35P	4M x 16bit CMOS Dynamic RAM with Fast Page Mode
	K4F661612D	390Kb / 35P	4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
	K4F661612E	386Kb / 35P	4M x 16bit CMOS Dynamic RAM with Fast Page Mode
	KM416V4000C	88Kb / 9P	4M x 16bit CMOS Dynamic RAM with Fast Page Mode
	KM416C4000C	901Kb / 35P	4M x 16bit CMOS Dynamic RAM with Fast Page Mode
	K4F661612C	844Kb / 35P	4M x 16bit CMOS Dynamic RAM with Fast Page Mode
	K4F661612B	844Kb / 35P	4M x 16bit CMOS Dynamic RAM with Fast Page Mode
	KM416C1000C	767Kb / 34P	1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
	K4F171611D	528Kb / 34P	1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
	KM416C1000B	84Kb / 8P	1M x 16Bit CMOS Dynamic RAM with Fast Page Mode

More results

KM416C4100B Arkusz danych(PDF) 7 Page - Samsung semiconductor

KM416C4100B Arkusz danych(HTML) 7 Page - Samsung semiconductor

Podobny numer części - KM416C4100B

Podobny opis - KM416C4100B

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