KM432S2030CT-G7 datasheet(3/43 Pages) SAMSUNG

Numer części	KM432S2030CT-G7

Szczegółowy opis	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

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Producent	SAMSUNG [Samsung semiconductor]

Strona internetowa	http://www.samsung.com/Products/Semiconductor

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KM432S2030C

CMOS SDRAM

REV. 1.1 Mar. '99

- 3 -

The KM432S2030C is 67,108,864 bits synchronous high data

rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,

fabricated with SAMSUNG

′s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock. I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst length and programmable latencies allow the same device

to be useful for a variety of high bandwidth, high performance

memory system applications.

• 3.3V power supply

• LVTTL compatible with multiplexed address

• Four banks operation

• MRS cycle with address key programs

-. CAS latency (2 & 3)

-. Burst length (1, 2, 4, 8 & Full page)

-. Burst type (Sequential & Interleave)

• All inputs are sampled at the positive going edge of the system

clock

• Burst read single-bit write operation

• DQM for masking

• Auto & self refresh

• 15.6us refresh duty cycle

GENERAL DESCRIPTION

FEATURES

512K x 32Bit x 4 Banks Synchronous DRAM

ORDERING INFORMATION

Part NO.

Max Freq.

Interface

Package

KM432S2030CT-G/F6

166MHz

LVTTL

86

TSOP(II)

KM432S2030CT-G/F7

143MHz

KM432S2030CT-G/F8

125MHz

KM432S2030CT-G/F10

100MHz

FUNCTIONAL BLOCK DIAGRAM

Samsung Electronics reserves the right to

change products or specification without

notice.

*

Bank Select

Data Input Register

512K x 32

Column Decoder

Latency & Burst Length

Programming Register

LCKE

LRAS

LCBR

LWE

LDQM

CLK

CKE

CS

RAS

CAS

WE

DQM

LWE

LDQM

DQi

CLK

ADD

LCAS

LWCBR

512K x 32

Timing Register

Podobny numer części - KM432S2030CT-G7

Producent	Numer części	Arkusz danych	Szczegółowy opis
List of Unclassifed Man...	KM432J	34Kb / 1P	R. F. Molded Chokes

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Podobny opis - KM432S2030CT-G7

Producent	Numer części	Arkusz danych	Szczegółowy opis
Samsung semiconductor	K4S643232E-TI	100Kb / 12P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
	K4S643232F	101Kb / 12P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
	K4S643232C	1Mb / 43P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
	K4S643232E	102Kb / 12P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
	K4S643232E-	101Kb / 12P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
	K4S643232F-	99Kb / 12P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
Taiwan Memory Technolog...	T436432B	707Kb / 72P	2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
Hynix Semiconductor	HY5V62CF	353Kb / 11P	4 Banks x 512K x 32Bit Synchronous DRAM
	HY57V653220BTC	154Kb / 12P	4 Banks x 512K x 32Bit Synchronous DRAM
	HY57V643220CT	183Kb / 12P	4 Banks x 512K x 32Bit Synchronous DRAM

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KM432S2030CT-G7 Arkusz danych(PDF) 3 Page - Samsung semiconductor

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