Zakładka z wyszukiwarką danych komponentów
  Polish  ▼
ALLDATASHEET.PL

X  

KM416C12CJ-L45 Arkusz danych(PDF) 4 Page - Samsung semiconductor

Numer części KM416C12CJ-L45
Szczegółowy opis  1M x 16Bit CMOS Dynamic RAM with Extended Data Out
Download  35 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  SAMSUNG [Samsung semiconductor]
Strona internetowa  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416C12CJ-L45 Arkusz danych(HTML) 4 Page - Samsung semiconductor

  KM416C12CJ-L45 Datasheet HTML 1Page - Samsung semiconductor KM416C12CJ-L45 Datasheet HTML 2Page - Samsung semiconductor KM416C12CJ-L45 Datasheet HTML 3Page - Samsung semiconductor KM416C12CJ-L45 Datasheet HTML 4Page - Samsung semiconductor KM416C12CJ-L45 Datasheet HTML 5Page - Samsung semiconductor KM416C12CJ-L45 Datasheet HTML 6Page - Samsung semiconductor KM416C12CJ-L45 Datasheet HTML 7Page - Samsung semiconductor KM416C12CJ-L45 Datasheet HTML 8Page - Samsung semiconductor KM416C12CJ-L45 Datasheet HTML 9Page - Samsung semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 35 page
background image
KM416C1004C, KM416C1204C
CMOS DRAM
KM416V1004C, KM416V1204C
*Note :
ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one Hyper page mode cycle time, tHPC.
DC AND OPERATING CHARACTERISTICS (Continued)
ICC1* : Operating Current (RAS and UCAS, LCAS, Address cycling @tRC=min.)
ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH)
ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS, Address cycling @tRC=min.)
ICC4* : Hyper Page Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @tHPC=min.)
ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS, UCAS or LCAS cycling @tRC=min.)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, UCAS, LCAS=0.2V,
DQ=Don
′t care, TRC=31.25us(4K/L-ver), 125us(1K/L-ver)
TRAS=TRASmin~300ns
ICCS : Self Refresh Current
RAS=UCAS=LCAS=VIL, W=OE=A0 ~ A11=VCC-0.2V or 0.2V,
DQ0 ~ DQ15=VCC-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
KM416V1004C
KM416V1204C
KM416C1004C
KM416C1204C
ICC1
Don
′t care
-45
-5
-6
100
90
80
150
140
130
100
90
80
150
140
130
mA
mA
mA
ICC2
Normal
L
Don
′t care
1
1
1
1
2
1
2
1
mA
mA
ICC3
Don
′t care
-45
-5
-6
100
90
80
150
140
130
100
90
80
150
140
130
mA
mA
mA
ICC4
Don
′t care
-45
-5
-6
110
100
90
110
100
90
110
100
90
110
100
90
mA
mA
mA
ICC5
Normal
L
Don
′t care
0.5
200
0.5
200
1
200
1
200
mA
uA
ICC6
Don
′t care
-45
-5
-6
100
90
80
150
140
130
110
90
80
150
140
130
mA
mA
mA
ICC7
L
Don
′t care
300
200
350
250
uA
ICCS
L
Don
′t care
150
150
200
200
uA


Podobny numer części - KM416C12CJ-L45

ProducentNumer częściArkusz danychSzczegółowy opis
logo
Samsung semiconductor
KM416C1200B SAMSUNG-KM416C1200B Datasheet
84Kb / 8P
   1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416C1200C SAMSUNG-KM416C1200C Datasheet
767Kb / 34P
   1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
More results

Podobny opis - KM416C12CJ-L45

ProducentNumer częściArkusz danychSzczegółowy opis
logo
Samsung semiconductor
K4E171611D SAMSUNG-K4E171611D Datasheet
553Kb / 35P
   1M x 16Bit CMOS Dynamic RAM with Extended Data Out
KM416C254D SAMSUNG-KM416C254D Datasheet
840Kb / 36P
   256K x 16Bit CMOS Dynamic RAM with Extended Data Out
KM416V4004C SAMSUNG-KM416V4004C Datasheet
808Kb / 36P
   4M x 16bit CMOS Dynamic RAM with Extended Data Out
KM416V1204BJ SAMSUNG-KM416V1204BJ Datasheet
2Mb / 31P
   1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT
K4E661612C SAMSUNG-K4E661612C Datasheet
884Kb / 36P
   4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E661612B SAMSUNG-K4E661612B Datasheet
885Kb / 36P
   4M x 16bit CMOS Dynamic RAM with Extended Data Out
KM416V4004B SAMSUNG-KM416V4004B Datasheet
806Kb / 36P
   4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E661611D SAMSUNG-K4E661611D Datasheet
882Kb / 36P
   4M x 16bit CMOS Dynamic RAM with Extended Data Out
KM416C4004C SAMSUNG-KM416C4004C Datasheet
946Kb / 36P
   4M x 16bit CMOS Dynamic RAM with Extended Data Out
KM416V1004A SAMSUNG-KM416V1004A Datasheet
1Mb / 35P
   1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35


Arkusz danych Pobierz

Go To PDF Page


Link URL




Polityka prywatności
ALLDATASHEET.PL
Czy Alldatasheet okazała się pomocna?  [ DONATE ] 

O Alldatasheet   |   Reklama   |   Kontakt   |   Polityka prywatności   |   Linki   |   Lista producentów
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com