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KM416V10CT-L5 Arkusz danych(PDF) 6 Page - Samsung semiconductor |
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KM416V10CT-L5 Arkusz danych(HTML) 6 Page - Samsung semiconductor |
6 / 35 page KM416C1004C, KM416C1204C CMOS DRAM KM416V1004C, KM416V1204C AC CHARACTERISTICS (Continued) Parameter Symbol -45 -5 -6 Units Notes Min Max Min Max Min Max Data set-up time tDS 0 0 0 ns 9,17 Data hold time tDH 7 8 10 ns 9,17 Refresh period (1K, Normal) tREF 16 16 16 ms Refresh period (4K, Normal) tREF 64 64 64 ms Refresh period (L-ver) tREF 128 128 128 ms Write command set-up time tWCS 0 0 0 ns 7 CAS to W delay time tCWD 28 32 36 ns 7,13 RAS to W delay time tRWD 59 67 79 ns 7 Column address W delay time tAWD 37 42 49 ns 7 CAS precharge to W delay time tCPWD 39 47 54 ns 7 CAS set-up time (CAS -before-RAS refresh) tCSR 5 5 5 ns 15 CAS hold time (CAS -before-RAS refresh) tCHR 10 10 10 ns 16 RAS to CAS precharge time tRPC 5 5 5 ns Access time from CAS precharge tCPA 25 28 35 ns 3 Hyper Page mode cycle time tHPC 18 20 25 ns 18 Hyper Page read-modify-write cycle time tHPRWC 39 47 56 ns 18 CAS precharge time (Hyper Page cycle) tCP 7 8 10 ns 12 RAS pulse width (Hyper Page cycle) tRASP 45 200K 50 200K 60 200K ns RAS hold time from CAS precharge tRHCP 27 30 35 ns OE access time tOEA 13 13 15 ns 3 OE to data delay tOED 10 13 15 ns Output buffer turn off delay time from OE tOEZ 3 13 3 13 3 15 ns 6 OE command hold time tOEH 10 13 15 ns Output data hold time tDOH 4 5 5 ns Output buffer turn off delay from RAS tREZ 3 13 3 13 3 15 ns 6,19 Output buffer turn off delay from W tWEZ 3 13 3 13 3 15 ns 6 W to data delay tWED 15 15 15 ns OE to CAS hold time tOCH 5 5 5 ns CAS hold time to OE tCHO 5 5 5 ns OE precharge time tOEP 5 5 5 ns W pulse width (Hyper Page Cycle) tWPE 5 5 5 ns RAS pulse width (C-B-R self refresh) tRASS 100 100 100 us 20,21,22 RAS precharge time (C-B-R self refresh) tRPS 79 90 110 ns 20,21,22 CAS hold time (C-B-R self refresh) tCHS -50 -50 -50 ns 20,21,22 |
Podobny numer części - KM416V10CT-L5 |
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Podobny opis - KM416V10CT-L5 |
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