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KM62256CLTGE-7L Arkusz danych(PDF) 2 Page - Samsung semiconductor

Numer części KM62256CLTGE-7L
Szczegółowy opis  32Kx8 bit Low Power CMOS Static RAM
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Producent  SAMSUNG [Samsung semiconductor]
Strona internetowa  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM62256CLTGE-7L Arkusz danych(HTML) 2 Page - Samsung semiconductor

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Revision 4.0
KM62256C Family
CMOS SRAM
December 1997
2
32Kx8 bit Low Power CMOS Static RAM
The KM62256C family is fabricated by SAMSUNG
′s advanced
CMOS process technology. The family supports various operat-
ing temperature ranges and has various package types for user
flexibility of system design. The family also support low data
retention voltage for battery back-up operation with low data
retention current.
GENERAL DESCRIPTION
FEATURES
• Process Technology : 0.7µm CMOS
• Organization : 32Kx8
• Power Supply Voltage : Single 5V±10%
• Low Data Retention Voltage : 2V(Min)
• Three state output and TTL Compatible
• Package Type : 28-DIP-600, 28-SOP-450,
28-TSOP1 -0813.4F/R
PIN DESCRIPTION
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
NameName
Function
A0~A14
Address Inputs
WE
Write Enable Input
CS
Chip Select Input
OE
Output Enable Input
I/O1~I/O8
Data Inputs/Outputs
Vcc
Power(5V)
Vss
Ground
28-DIP
28-SOP
15
16
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
PRODUCT FAMILY
Product Family
Operating Temperature.
Speed(ns)
PKG Type
Power Dissipation
Standby
(ISB1, Max)
Operating
(Icc2)
KM62256CL
Commercial (0~70
°C)
55/70ns
28-DIP, 28-SOP
28-TSOP I R/F
100
µA
70mA
KM62256CL-L
20
µA
KM62256CLE
Extended (-25~85
°C)
70ns
28-SOP
28-TSOP I R/F
100
µA
KM62256CLE-L
50
µA
KM62256CLI
Industrial (-40~85
°C)
70ns
28-SOP
28-TSOP I R/F
100
µA
KM62256CLI-L
50
µA
FUNCTIONAL BLOCK DIAGRAM
A11
A9
A8
A13
WE
VCC
A3
A14
A12
A7
A6
A5
A4
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
28-TSOP
Type I - Forward
1
2
3
4
5
6
7
8
9
10
11
12
13
14
27
26
28
25
24
23
22
21
20
19
18
17
16
15
OE
28-TSOP
A11
A9
A8
A13
WE
VCC
A3
A14
A12
A7
A6
A5
A4
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
27
26
28
25
24
23
22
21
20
19
18
17
16
15
OE
Type I - Reverse
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
Precharge circuit.
Memory array
512 rows
64
×8 columns
I/O Circuit
Column select
Clk gen.
Row
select
A0
A1
A2
A9
A10
A11
A3
A4
A5
A6
A7
A8
A13
CS
WE
I/O1
Data
cont
Data
cont
OE
I/O8
A12
A14
Control
Logic


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