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KM6264BLGI-10 Arkusz danych(PDF) 7 Page - Samsung semiconductor |
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KM6264BLGI-10 Arkusz danych(HTML) 7 Page - Samsung semiconductor |
7 / 10 page KM6264B Family ELECTRONICS CMOS SRAM Revision. 0.0 Auust. 1996 7 TIMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE (1) (Address Controlled) (/CS=/OE=Vil, CS2=/WE=Vih) Address Data Out tRC Previous Data Valid Data Valid tAA tOH TIMING WAVEFORM OF READ CYCLE(2) (/WE= VIH) tRC tAA tCO1 tOE tOLZ tOH tLZ tHZ tOHZ Address /CS1 /OE Data out Data Vailid High - Z Notes(Read Cycle) 1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(Max) is less than tLZ(Min) both for a given device and device to device interconnection. tCO2 CS2 tHZ(1,2) |
Podobny numer części - KM6264BLGI-10 |
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Podobny opis - KM6264BLGI-10 |
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