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KM681000BLTI-7 Arkusz danych(PDF) 7 Page - Samsung semiconductor |
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KM681000BLTI-7 Arkusz danych(HTML) 7 Page - Samsung semiconductor |
7 / 11 page PRELIMINARY Revision 0.3 KM681000B Family CMOS SRAM April 1996 Address Data Out Previous Data Valid Data Valid TIMMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE (1) (Address Controlled) (CS1=OE=VIL, CS2= WE= VIH) TIMING WAVEFORM OF READ CYCLE(WE=VIH) Data Valid High-Z CS1 Address CS2 OE Data out NOTES (READ CYCLE) 1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage le vels. 2. At any given temperature and voltage condition, tHZ(max.) is less than tLZ(min.) both for a given device and from device to device. tRC tOH tOH tAA tOLZ tLZ tOHZ tHZ(1,2) tCO1 tAA tRC tCO2 tOE |
Podobny numer części - KM681000BLTI-7 |
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Podobny opis - KM681000BLTI-7 |
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