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BF1202WR Arkusz danych(PDF) 2 Page - NXP Semiconductors

Numer części BF1202WR
Szczegółowy opis  N-channel dual-gate PoLo MOS-FETs
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Strona internetowa  http://www.nxp.com
Logo NXP - NXP Semiconductors

BF1202WR Arkusz danych(HTML) 2 Page - NXP Semiconductors

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2010 Sep 16
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NXP Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs
BF1202; BF1202R; BF1202WR
FEATURES
 Short channel transistor with high
forward transfer admittance to input
capacitance ratio
 Low noise gain controlled amplifier
 Partly internal self-biasing circuit to
ensure good cross-modulation
performance during AGC and good
DC stabilization.
APPLICATIONS
 VHF and UHF applications with
3 to 9 V supply voltage, such as
digital and analogue television
tuners and professional
communications equipment.
DESCRIPTION
Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1202,
BF1202R and BF1202WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
PINNING
Marking code legend:
* = - : made in Hong Kong
* = p : made in Hong Kong
* = t : made in Malaysia
PIN
DESCRIPTION
1source
2drain
3gate 2
4gate 1
handbook, 2 columns
Top view
MSB014
12
3
4
Fig.1
Simplified outline
(SOT143B).
BF1202 marking code: LD*
handbook, 2 columns
Top view
MSB035
1
2
4
3
Fig.2
Simplified outline
(SOT143R).
BF1202R marking code: LE*
lfpage
Top view
MSB842
21
4
3
Fig.3
Simplified outline
(SOT343R).
BF1202WR marking code: LE*
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
drain-source voltage

10
V
ID
drain current

30
mA
Ptot
total power dissipation

200
mW
y
fs
forward transfer admittance
25
30
40
mS
Cig1-ss
input capacitance at gate 1
1.7
2.2
pF
Crss
reverse transfer capacitance
f = 1 MHz
15
30
fF
F
noise figure
f = 800 MHz
1.1
1.8
dB
Xmod
cross-modulation
input level for k = 1% at
40 dB AGC
100
105
dB
V
Tj
operating junction temperature

150
C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.


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