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SL3S1203FTB0 Arkusz danych(PDF) 7 Page - NXP Semiconductors

Numer części SL3S1203FTB0
Szczegółowy opis  UCODE G2iL and G2iL
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Producent  NXP [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo NXP - NXP Semiconductors

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SL3S1203_1213_SDS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product short data sheet
PUBLIC
Rev. 3.2 — 9 November 2010
198732
7 of 22
NXP Semiconductors
SL3S1203_1213
UCODE G2iL and G2iL+
10. Mechanical specification
10.1 Wafer specification
See Ref. 20 “Data sheet - Delivery type description – General specification for 8” wafer on
UV-tape with electronic fail die marking, BU-ID document number: 1093**”.
10.1.1 Wafer
Table 6.
Specifications
Wafer
Designation
each wafer is scribed with batch number
and wafer number
Diameter
200 mm (8”)
Thickness
75 μm ± 15 μm
Number of pads
4
Pad location
non diagonal/ placed in chip corners
Distance pad to pad RFN-RFP
333.0 µm
Distance pad to pad OUT-RFN
383.0 µm
Process
CMOS 0.14 µm
Batch size
25 wafers
Potential good dies per wafer
130.000
Wafer backside
Material
Si
Treatment
ground and stress release
Roughness
Ra max. 0.5 μm, Rt max. 5 μm
Chip dimensions
Die size including scribe
0.485 mm × 0.435 mm = 0.211 mm2
Scribe line width:
x-dimension = 15 μm
y-dimension = 15 μm
Passivation on front
Type
Sandwich structure
Material
PE-Nitride (on top)
Thickness
1.75 μm total thickness of passivation
Au bump
Bump material
> 99.9% pure Au
Bump hardness
35 – 80 HV 0.005
Bump shear strength
> 70 MPa
Bump height
18 μm
Bump height uniformity
within a die
± 2 μm
– within a wafer
± 3 μm
– wafer to wafer
± 4 μm
Bump flatness
±1.5 μm


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