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TEA1530AT Arkusz danych(PDF) 10 Page - NXP Semiconductors |
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TEA1530AT Arkusz danych(HTML) 10 Page - NXP Semiconductors |
10 / 21 page TEA1530T_AT_AP_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 30 June 2008 10 of 21 NXP Semiconductors TEA1530T/AT/AP GreenChip II SMPS control IC 7.14 Driver The driver circuit to the gate of the power MOSFET has a current sourcing capability of typically 150 mA and a current sink capability of typically, 500 mA at VCC = 9.5 V. At VCC = 15 V, the current sourcing capability is typically 250 mA and the current sink capability typically 0.7 A. This permits fast turning on and off of the power MOSFET for efficient operation. A low driver source current has been chosen to limit the ∆V/∆t at switch-on. This reduces ElectroMagnetic Interference (EMI) and also limits the current spikes across Rsense. 8. Limiting values Fig 7. Soft start-up 014aaa254 Css Rss SENSE Rsense Istartup(soft) Vocp start-up 6 0.5 V Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages are measured with respect to ground (pin 2); positive currents flow into the chip; pin VCC may not be current driven. The voltage ratings are valid provided other ratings are not violated; current ratings are valid provided the maximum power rating is not violated. Symbol Parameter Conditions Min Max Unit Voltages VCC supply voltage continuous −0.4 +20 V VPROTECT voltage on pin PROTECT continuous −0.4 +5 V VCTRL voltage on pin CTRL −0.4 +5 V VSENSE voltage on pin SENSE current limited −0.4 - V VDRAIN voltage on pin DRAIN −0.4 +650 V Currents ICTRL current on pin CTRL d < 10 % - 50 mA ISENSE current on pin SENSE −1 +10 mA IDRIVER current on pin DRIVER d < 10 % −0.8 +2 A IDRAIN current on pin DRAIN - 5 mA |
Podobny numer części - TEA1530AT |
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Podobny opis - TEA1530AT |
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