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STB7N52K3 Arkusz danych(PDF) 3 Page - STMicroelectronics |
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STB7N52K3 Arkusz danych(HTML) 3 Page - STMicroelectronics |
3 / 18 page STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3 Electrical ratings Doc ID 14896 Rev 2 3/18 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit TO-220 DPAK D²PAK TO-220FP VDS Drain-source voltage (VGS = 0) 525 V VGS Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 6.2 6.2 (1) 1. Limited by package A ID Drain current (continuous) at TC = 100 °C 4.5 4.5 (1) A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 24.8 24.8 (1) A PTOT Total dissipation at TC = 25 °C 90 25 W IAR Avalanche current, repetitive or not- repetitive (pulse width limited by Tj max) 6.2 A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50V) 100 mJ VESD(G-S) Gate source ESD(HBM-C = 100 pF, R = 1.5 k Ω) 2500 V dv/dt (3) 3. ISD ≤ 6.3 A, di/dt = TBD, VDD = 80% V(BR)DSS. Peak diode recovery voltage slope 12 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) 2500 V Tstg Storage temperature -55 to 150 °C Tj Max. operating junction temperature 150 °C Table 3. Thermal data Symbol Parameter Value Unit TO-220 DPAK D²PAK TO-220FP Rthj-case Thermal resistance junction-case max 1.39 5 °C/W Rthj-pcb Thermal resistance junction-pcb max 50 30 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
Podobny numer części - STB7N52K3_09 |
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Podobny opis - STB7N52K3_09 |
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