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TPC8305 Arkusz danych(PDF) 1 Page - Toshiba Semiconductor |
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TPC8305 Arkusz danych(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TPC8305 2006-11-16 1 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII) TPC8305 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) High forward transfer admittance : |Yfs| = 12 S (typ.) Low leakage current : IDSS = −10 µA (max) (VDS = −20 V) Enhancement mode : Vth = −0.5~ −1.2 V (VDS = −10 V, ID = −1mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −20 V Drain-gate voltage (RGS = 20 kΩ) VDGR −20 V Gate-source voltage VGSS ±12 V DC (Note 1) ID −5 Drain curren Pulse IDP −20 A Single-device operation (Note 3a) PD (1) 1.5 Drain power dissipation (t = 10s) (Note 2a) Single-device value at dual operation (Note 3b) PD(2) 1.0 W Single-device operation (Note 3a) PD (1) 0.75 Drain power dissipation (t = 10s) (Note 2b) Single-device value at dual operation (Note 3b) PD (2) 0.45 W Single pulse avalanche energy (Note 4) EAS 32.5 mJ Avalanche current (Note 1) IAR −5 A Repetitive avalanche energy Single-device value at operation (Note 2a, Note 3b, Note 5) EAR 0.10 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5): See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1E Weight: 0.08 g (typ.) Circuit Configuration |
Podobny numer części - TPC8305_06 |
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Podobny opis - TPC8305_06 |
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