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STB75N20 Arkusz danych(PDF) 3 Page - STMicroelectronics |
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STB75N20 Arkusz danych(HTML) 3 Page - STMicroelectronics |
3 / 16 page STB75N20 - STP75N20 - STW75N20 Electrical ratings 3/16 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 200 V VDGR Drain-gate voltage (RGS = 20 kΩ) 200 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 75 A ID Drain current (continuous) at TC = 100°C 47 A IDM (1) 1. ISD < 20A, di/dt < 100A/µs, VDD = 80% V(BR)DSS Drain current (pulsed) 300 A Derating factor 1.52 PTOT Total dissipation at TC = 25°C 190 W TJ Tstg Operating junction temperature Storage temperture -50 to 150 °C Table 2. Thermal resistance Symbol Parameter Value Unit TO-220/D²PAK TO-247 RthJC Thermal resistance junction-case Max 0.66 °C/W RthJ-pcb (1) 1. When mounted on inch²FR-4 board (t < 10µs) Thermal resistance junction-pcb Max 34 -- °C/W RthJA Thermal resistance junction-ambient Max 62.5 40 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 3. Avalanche characteristics Symbol Parameter Max value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) 37 A EAS Single pulse avalanche energy (starting TJ= 25°C, Id= Iar, Vdd=50V) 205 mJ |
Podobny numer części - STB75N20 |
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Podobny opis - STB75N20 |
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