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STGF10NC60HD Arkusz danych(PDF) 5 Page - STMicroelectronics

Numer części STGF10NC60HD
Szczegółowy opis  600 V - 10 A - very fast IGBT
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGF10NC60HD Arkusz danych(HTML) 5 Page - STMicroelectronics

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STGB10NC60HD, STGD10NC60HD, STGF10NC60HD, STGP10NC60HD
Electrical characteristics
5/19
Table 6.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390 V, IC = 5 A
RG= 10 Ω, VGE= 15 V,
(see Figure 18)
(see Figure 20)
14.2
5
1000
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390 V, IC = 5 A
RG= 10 Ω, VGE= 15 V,
TC = 125 °C
(see Figure 18)
(see Figure 20)
14
5
920
ns
ns
A/µs
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
Vcc = 390 V, IC = 5 A,
RGE = 10 Ω,
VGE = 15 V
(see Figure 18)
(see Figure 20)
27
72
85
ns
ns
ns
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
Vcc = 390 V, IC = 5 A,
RGE=10 Ω, VGE =15 V,
TC = 125 °C
(see Figure 18)
(see Figure 20)
50
108
139
ns
ns
ns
Table 7.
Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon
(1)
Eoff
(2)
Ets
1.
Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 18. If the IGBT is offered
in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25 °C and 125 °C)
2.
Turn-off losses include also the tail of the collector current
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390 V, IC = 5 A
RG= 10 Ω, VGE = 15 V,
(see Figure 18)
31.8
95
126.8
µJ
µJ
µJ
Eon
(1)
Eoff
(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390 V, IC = 5 A
RG= 10 Ω, VGE = 15 V,
TC = 125 °C
(see Figure 18)
61.8
173
234.8
µJ
µJ
µJ


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