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STD60N55F3 Arkusz danych(PDF) 5 Page - STMicroelectronics |
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STD60N55F3 Arkusz danych(HTML) 5 Page - STMicroelectronics |
5 / 20 page STx60N55F3 Electrical characteristics Doc ID 13242 Rev 4 5/20 Table 7. Source drain diode Symbol Parameter Test conditions Packages Min. Typ. Max. Unit ISD ISDM (1) Source-drain current Source-drain current (pulsed) DPAK-D2PAK- I2PAK-I2PAK- TO-220 - 80 320 A A ISD ISDM (1) Source-drain current Source-drain current (pulsed) TO-220FP - 42 168 A A VSD Forward on voltage ISD = 65A, VGS = 0 -1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 65A, VDD = 30V di/dt = 100A/µs, Tj = 150°C (see Figure 17) - 47 87 3.7 ns nC A 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% |
Podobny numer części - STD60N55F3 |
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Podobny opis - STD60N55F3 |
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