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STD9NM50N Arkusz danych(PDF) 3 Page - STMicroelectronics

Numer części STD9NM50N
Szczegółowy opis  N-channel 500V - 0.47廓 - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh??Power MOSFET
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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Product(s)
STD9NM50N - STD9NM50N-1 - STP9NM50N - STF9NM50N
Electrical ratings
3/17
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220
DPAK/IPAK
TO-220FP
VDS
Drain-source voltage (VGS=0)
500
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25°C
7.5
7.5 (1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100°C
5
5 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
30
30 (1)
A
PTOT
Total dissipation at TC = 25°C
70
25
W
dv/dt (3)
3.
ISD ≤7.5A, di/dt ≤400A/µs, VDD =80% V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1s;TC=25°C)
--
2500
V
Tj
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 2.
Thermal data
Symbol
Parameter
TO-220
DPAK/IPAK
TO-220FP
Unit
Rthj-case
Thermal resistance junction-case max
1.78
5
°C/W
Rthj-amb
Thermal resistance junction-amb max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 3.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
3A
EAS
Single pulse avalanche energy
(starting Tj=25°C, ID=IAS, VDD= 50V)
150
mJ


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