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BC847BPDXV6T1 Arkusz danych(PDF) 2 Page - ON Semiconductor

Numer części BC847BPDXV6T1
Szczegółowy opis  Dual General Purpose Transistor
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Producent  ONSEMI [ON Semiconductor]
Strona internetowa  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BC847BPDXV6T1 Arkusz danych(HTML) 2 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (NPN) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage
(IC = 10 mA)
V(BR)CEO
45
V
Collector − Emitter Breakdown Voltage
(IC = 10 μA, VEB = 0)
V(BR)CES
50
V
Collector − Base Breakdown Voltage
(IC = 10 mA)
V(BR)CBO
50
V
Emitter − Base Breakdown Voltage
(IE = 1.0 mA)
V(BR)EBO
6.0
V
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ICBO
15
5.0
nA
μA
ON CHARACTERISTICS
DC Current Gain
(IC = 10 μA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
hFE
200
150
290
475
Collector − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
0.25
0.6
V
Base − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
0.7
0.9
V
Base − Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base − Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
660
700
770
mV
SMALL−SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT
100
MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Cobo
4.5
pF
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
NF
10
dB


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