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BCW72LT1D Arkusz danych(PDF) 2 Page - ON Semiconductor |
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BCW72LT1D Arkusz danych(HTML) 2 Page - ON Semiconductor |
2 / 7 page BCW72LT1G http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 2.0 mAdc, VEB = 0) V(BR)CEO 45 − − Vdc Collector−Emitter Breakdown Voltage (IC = 2.0 mAdc, VEB = 0) V(BR)CES 45 − − Vdc Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 50 − − Vdc Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − − Vdc Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 100°C) ICBO − − − − 100 10 nAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE 200 − 450 − Collector−Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 50 mAdc, IB = 2.5 mAdc) VCE(sat) − − − 0.21 0.25 − Vdc Base −Emitter Saturation Voltage (IC = 50 mAdc, IB = 2.5 mAdc) VBE(sat) − 0.85 − Vdc Base −Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) VBE(on) 0.6 − 0.75 Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT − 300 − MHz Output Capacitance (IE = 0, VCB = 10 Vdc, f = 1.0 MHz) Cobo − − 4.0 pF Input Capacitance (IE = 0, VCB = 10 Vdc, f = 1.0 MHz) Cibo − 9.0 − pF Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB Figure 1. Turn−On Time Figure 2. Turn−Off Time EQUIVALENT SWITCHING TIME TEST CIRCUITS *Total shunt capacitance of test jig and connectors 10 k +3.0 V 275 CS < 4.0 pF* 10 k +3.0 V 275 CS < 4.0 pF* 1N916 300 ns DUTY CYCLE = 2% +10.9 V -0.5 V <1.0 ns 10 < t1 < 500 ms DUTY CYCLE = 2% +10.9 V 0 -9.1 V < 1.0 ns t1 |
Podobny numer części - BCW72LT1D |
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Podobny opis - BCW72LT1D |
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