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BAS116 Arkusz danych(PDF) 1 Page - Infineon Technologies AG |
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BAS116 Arkusz danych(HTML) 1 Page - Infineon Technologies AG |
1 / 6 page 2007-04-19 1 BAS116... Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BAS116 ! Type Package Configuration Marking BAS116 SOT23 single JVs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 80 V Peak reverse voltage VRM 85 Forward current IF 250 mA Non-repetitive peak surge forward current t = 1 µs t = 1 s IFSM 4.5 0.5 A Total power dissipation TS ≤ 54°C Ptot 370 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) BAS116 RthJS ≤ 260 K/W 1Pb-containing package may be available upon special request 2For calculation of RthJA please refer to Application Note Thermal Resistance |
Podobny numer części - BAS116_07 |
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Podobny opis - BAS116_07 |
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