STP11NM60ND datasheet(5/19 Pages) STMICROELECTRONICS

Numer części	STP11NM60ND

Szczegółowy opis	N-channel 600 V, 0.37 廓, 10 A, FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

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Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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5 / 19 page

STD/F/I/P/U11NM60ND

Electrical characteristics

Doc ID 14625 Rev 2

5/19

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS= 0

600

V

dv/dt(1)

1.

Value measured at turn off under inductive load

Drain-source voltage slope

VDD = 480 V,ID = 10 A,

VGS = 10 V

45

V/ns

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = max rating,

VDS = max rating,@125 °C

1

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

100

nA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

3

4

5

V

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 5 A

0.37

0.45

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward transconductance

VDS =15 V, ID= 5 A

-

7.5

-

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f =1 MHz,

VGS = 0

-

850

44

5

-

pF

Coss eq.

(2)

2.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS = 0, VDS = 0V to 480 V

-

130

-

pF

Rg

Gate input resistance

f=1 MHz Gate DC Bias=0

Test signal level=20 mV

open drain

-3.7

-

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 480 V, ID = 10 A

VGS = 10 V

(see Figure 19)

-

30

4

16

-

nC

Podobny numer części - STP11NM60ND

Producent	Numer części	Arkusz danych	Szczegółowy opis
STMicroelectronics	STP11NM60ND	530Kb / 18P	N-channel 600V - 0.37廓 - 10A - FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
Inchange Semiconductor ...	STP11NM60ND	320Kb / 2P	isc N-Channel MOSFET Transistor
VBsemi Electronics Co.,...	STP11NM60ND	1Mb / 8P	N-Channel 650 V (D-S) MOSFET

More results

Podobny opis - STP11NM60ND

Producent	Numer części	Arkusz danych	Szczegółowy opis
STMicroelectronics	STD11NM60ND	530Kb / 18P	N-channel 600V - 0.37廓 - 10A - FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
	STX11NM60N	641Kb / 20P	N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK
	STD11NM60N-1	623Kb / 21P	N-channel 600 V - 0.37 廓 - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh??Power MOSFET
	STB4NK60Z	578Kb / 20P	N-channel 600 V - 1.76 廓 - 4 A SuperMESH??Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP
	STB25NM60ND	530Kb / 18P	N-channel 600 V - 0.13 廓 - 21 A FDmesh??II Power MOSFET D2PAK - I2PAK - TO-220FP - TO-220 - TO-247
	STB15NM60ND	600Kb / 19P	N-channel 600 V - 0.27 廓 - 14 A - FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247
	STB21NM60ND	559Kb / 18P	N-channel 600 V, 0.17 廓, 17 A FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
	STX25NM60ND	600Kb / 18P	N-channel 600 V, 0.13 廓, 21 A FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
	STP21NM60ND	545Kb / 18P	N-channel 600 V, 0.17 廓, 17 A FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
	STD4NK60ZT4	970Kb / 28P	N-channel 600 V, 1.76 廓, 4 A SuperMESH??Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP

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