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SPI12N50C3 Arkusz danych(PDF) 2 Page - Infineon Technologies AG

Numer części SPI12N50C3
Szczegółowy opis  New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
Download  14 Pages
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Producent  INFINEON [Infineon Technologies AG]
Strona internetowa  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

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200
7-08-30
Rev.
3.0
Page 2
SPP12N50C3
SPI12N50C3, SPA12N50C3
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
VDS = 400 V, ID = 11.6 A, Tj = 125 °C
dv/dt
50
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Thermal resistance, junction - case
RthJC
-
-
1
K/W
Thermal resistance, junction - case, FullPAK
RthJC_FP
-
-
3.8
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
Thermal resistance, junction - ambient, FullPAK
RthJA_FP
-
-
80
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
RthJA
-
-
-
35
62
-
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s 4)
Tsold
-
-
260
°C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA
500
-
-
V
Drain-Source avalanche
breakdown voltage
V(BR)DS VGS=0V, ID=11.6A
-
600
-
Gate threshold voltage
VGS(th)
ID=500µA, VGS=VDS 2.1
3
3.9
Zero gate voltage drain current
IDSS
VDS=500V, VGS=0V,
Tj=25°C
Tj=150°C
-
-
0.1
-
1
100
µA
Gate-source leakage current
IGSS
VGS=20V, VDS=0V
-
-
100
nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=7A
Tj=25°C
Tj=150°C
-
-
0.34
0.92
0.38
-
Gate input resistance
RG
f=1MHz, open drain
-
1.4
-


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