SPI20N65C3 datasheet(2/15 Pages) INFINEON

Numer części	SPI20N65C3

Szczegółowy opis	New revolutionary high voltage technology Worldwide best RDS(on) in TO 220

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Producent	INFINEON [Infineon Technologies AG]

Strona internetowa	http://www.infineon.com

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2 / 15 page

200

7-08-30

Rev. 3.0

Page 2

SPP20N65C3, SPA20N65C3

SPI20N65C3

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain Source voltage slope

VDS = 480 V, ID = 20.7 A, Tj = 125 °C

dv/dt

50

V/ns

Thermal Characteristics

Parameter

Symbol

Values

Unit

min.

typ.

max.

Thermal resistance, junction - case

RthJC

-

0.6

K/W

Thermal resistance, junction - case, FullPAK

RthJC_FP

-

3.6

Thermal resistance, junction - ambient, leaded

RthJA

-

62

Thermal resistance, junction - ambient, FullPAK

RthJA_FP

-

80

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 3)

RthJA

-

35

62

-

Soldering temperature, wavesoldering

1.6 mm (0.063 in.) from case for 10s

Tsold

-

260

°C

Electrical Characteristics,

at Tj=25°C unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 650

-

V

Drain-Source avalanche

breakdown voltage

V(BR)DS VGS=0V, ID=7A

-

730

-

Gate threshold voltage

VGS(th)

ID=1000µA, VGS=VDS 2.1

3

3.9

Zero gate voltage drain current

IDSS

VDS=600V, VGS=0V,

Tj=25°C

Tj=150°C

-

0.1

-

1

100

µA

Gate-source leakage current

IGSS

VGS=20V, VDS=0V

-

100

nA

Drain-source on-state resistance RDS(on) VGS=10V, ID=13.1A

Tj=25°C

Tj=150°C

-

0.16

0.43

0.19

-

Ω

Gate input resistance

RG

f=1MHz, open drain

-

0.54

-

Podobny numer części - SPI20N65C3

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