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CSD17505Q5A Arkusz danych(PDF) 5 Page - Texas Instruments

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Numer części CSD17505Q5A
Szczegółowy opis  30V, N-Channel NexFET??Power MOSFETs
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Producent  TI1 [Texas Instruments]
Strona internetowa  http://www.ti.com
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CSD17505Q5A Arkusz danych(HTML) 5 Page - Texas Instruments

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0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
−75
−25
25
75
125
175
TC - Case Temperature - ºC
ID = 20A
VGS = 10V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
VSD − Source-to-Drain Voltage - V
TC = 25°C
TC = 125°C
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
200
VDS - Drain-to-Source Voltage - V
1ms
10ms
100ms
1s
DC
Single Pulse, Min Cu Area
Typical RthJA = 98ºC/W
1
10
100
1000
0.01
0.1
1
10
t(AV) - Time in Avalanche - ms
TC = 125°C
TC = 25°C
0
20
40
60
80
100
120
−50
−25
0
25
50
75
100
125
150
175
TC - Case Temperature - ºC
CSD17505Q5A
www.ti.com
SLPS301 – DECEMBER 2010
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 8. Normalized On-State Resistance vs. Temperature
Figure 9. Typical Diode Forward Voltage
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 12. Maximum Drain Current vs. Temperature
Copyright © 2010, Texas Instruments Incorporated
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