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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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FDD3860 Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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FDD3860 Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
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1 / 6 page  tm October 2008 ©2008 Fairchild Semiconductor Corporation FDD3860 Rev.C1 www.fairchildsemi.com 1 FDD3860 N-Channel PowerTrench® MOSFET 100V, 29A, 36m Ω Features Max rDS(on) = 36mΩ at VGS = 10V, ID = 5.9A High performance trench technology for extremely low rDS(on) 100% UIL tested RoHS Compliant General Description This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process. This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications. Applications DC-AC Conversion Synchronous Rectifier MOSFET Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V ID Drain Current -Continuous (Silicon limited) TC = 25°C 29 A -Continuous TA = 25°C (Note 1a) 6.2 -Pulsed 60 EAS Single Pulse Avalanche Energy (Note 3) 121 mJ PD Power Dissipation TC = 25°C 69 W Power Dissipation TA = 25°C (Note 1a) 3.1 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RθJC Thermal Resistance, Junction to Case 1.8 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1a) 40 Device Marking Device Package Reel Size Tape Width Quantity FDD3860 FDD3860 D-PAK (TO-252) 13’’ 12mm 2500 units G S D TO -2 52 D-PA K (TO -252) S G D |
Podobny numer części - FDD3860 |
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Podobny opis - FDD3860 |
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