SILICON EPITAXIAL

DUAL NPN TRANSISTORS

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Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 9009

Issue 1

Page 1 of 3

2N3904DCSM

A = 25°C unless otherwise stated)

Each Side

Total Device

VCBO

Collector – Base Voltage

60V

VCEO

Collector – Emitter Voltage

40V

VEBO

Emitter – Base Voltage

6V

IC

Continuous Collector Current

200mA

PD

Total Power Dissipation at

TA = 25°C

500mW

600mW

(1)

Derate Above 25°C

2.86mW/°C

3.43mW/°C

TJ

Junction Temperature Range

-55 to +200°C

Tstg

Storage Temperature Range

-55 to +200°C

Symbols

Parameters

Min.

Typ.

Max.

Units

RθJA

Thermal Resistance, Junction To Ambient

350

°C/W

Notes

Notes

Notes

Notes

(1)

Total device power dissipation limited by package.