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2SA1201 Arkusz danych(PDF) 1 Page - Toshiba Semiconductor

Numer części 2SA1201
Szczegółowy opis  Voltage Amplifier Applications Power Amplifier Applications
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SA1201 Arkusz danych(HTML) 1 Page - Toshiba Semiconductor

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2SA1201
2009-12-21
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1201
Voltage Amplifier Applications
Power Amplifier Applications
• High voltage: VCEO = −120 V
• High transition frequency: fT = 120 MHz (typ.)
• Small flat package
• PC = 1 to 2 W (mounted on a ceramic substrate)
• Complementary to 2SC2881
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−120
V
Collector-emitter voltage
VCEO
−120
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−800
mA
Base current
IB
−160
mA
PC
500
Collector power dissipation
PC
(Note 1)
1000
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note 1: Mounted on a ceramic substrate (250 mm
2 × 0.8 t)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
PW-MINI
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)


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