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2SA1429 Arkusz danych(PDF) 4 Page - Toshiba Semiconductor |
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2SA1429 Arkusz danych(HTML) 4 Page - Toshiba Semiconductor |
4 / 5 page 2SA1429 2010-03-09 4 Ambient temperature Ta (°C) PC – Ta Collector-emitter voltage VCE (V) Safe Operating Area Base-emitter voltage VBE (V) IC – VBE Collector current IC (A) VBE (sat) – IC 0 0 0.2 0.6 0.8 1.0 1.2 1.4 40 60 80 100 120 140 160 0.4 20 −0.1 −0.01 −0.03 −0.1 −0.3 −1 −0.3 −0.5 −1 −3 Ta = −55°C 25 Common emitter IC/IB = 20 100 −2.0 0 0 −0.4 −0.8 −1.2 −1.6 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 Common emitter VCE = −2 V 25 Ta = 100°C −55 −5 −0.3 −0.03 −0.05 −0.1 −0.3 −0.5 −1 −3 −1 −3 −10 −30 −100 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. IC max (continuous) IC max (pulsed)* 1 ms* 10 ms* 100 ms* DC operation Ta = 25°C 1 s* −0.1 −0.01 VCEO max |
Podobny numer części - 2SA1429_10 |
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Podobny opis - 2SA1429_10 |
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