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2SA1429 Arkusz danych(PDF) 4 Page - Toshiba Semiconductor

Numer części 2SA1429
Szczegółowy opis  Power Amplifier Applications Power Switching Applications
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SA1429 Arkusz danych(HTML) 4 Page - Toshiba Semiconductor

  2SA1429_10 Datasheet HTML 1Page - Toshiba Semiconductor 2SA1429_10 Datasheet HTML 2Page - Toshiba Semiconductor 2SA1429_10 Datasheet HTML 3Page - Toshiba Semiconductor 2SA1429_10 Datasheet HTML 4Page - Toshiba Semiconductor 2SA1429_10 Datasheet HTML 5Page - Toshiba Semiconductor  
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2SA1429
2010-03-09
4
Ambient temperature Ta (°C)
PC – Ta
Collector-emitter voltage VCE (V)
Safe Operating Area
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (A)
VBE (sat) – IC
0
0
0.2
0.6
0.8
1.0
1.2
1.4
40
60
80
100
120
140
160
0.4
20
−0.1
−0.01
−0.03
−0.1
−0.3
−1
−0.3
−0.5
−1
−3
Ta = −55°C
25
Common emitter
IC/IB = 20
100
−2.0
0
0
−0.4
−0.8
−1.2
−1.6
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
Common emitter
VCE = −2 V
25
Ta = 100°C
−55
−5
−0.3
−0.03
−0.05
−0.1
−0.3
−0.5
−1
−3
−1
−3
−10
−30
−100
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
IC max
(continuous)
IC max (pulsed)*
1 ms*
10 ms*
100 ms*
DC operation
Ta = 25°C
1 s*
−0.1
−0.01
VCEO max


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