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2SC2883 Arkusz danych(PDF) 3 Page - Toshiba Semiconductor |
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2SC2883 Arkusz danych(HTML) 3 Page - Toshiba Semiconductor |
3 / 4 page 2SC2883 2004-07-07 3 Ambient temperature Ta (°C) PC – Ta 0 0 0.8 0.2 0.4 0.6 20 40 60 80 100 120 140 160 1.2 1.0 (1) (2) (1) Mounted on a ceramic substrate (250 mm 2 × 0.8 t) (2) No heat sink Collector-emitter voltage VCE (V) IC – VCE Collector current IC (mA) hFE – IC Collector current IC (mA) VCE (sat) – IC Base-emitter voltage VBE (V) IC – VBE Collector-emitter voltage VCE (V) Safe Operating Area 0.1 3 0.3 5 1 10 100 30 10 30 50 100 300 500 1000 3000 5000 DC operation Ta = 25°C IC max (pulse)* IC max (continuous) 10 ms* 100 ms* 1 s* 1 ms* *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. Tested without a substrate. VCEO max 16 12 8 4 0 0 0.4 0.8 1.2 1.6 2 IB = 1 mA Common emitter Ta = 25°C 3 5 10 0 4 6 8 1.6 1.2 0.8 0.4 0 Common emitter VCE = 2 V Ta = 100°C 1.6 1.2 0.8 0.4 0 −25 25 Ta = 100°C Common emitter VCE = 2 V 25 −25 1 100 1000 300 3 300 1000 500 10 30 10 100 30 50 Ta = 100°C −25 Common emitter IC/IB = 50 25 100 10 3 0.03 30 300 1000 0.05 0.1 0.3 0.5 1 0.01 1 |
Podobny numer części - 2SC2883_04 |
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Podobny opis - 2SC2883_04 |
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