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2SC3076 Arkusz danych(PDF) 1 Page - Toshiba Semiconductor

Numer części 2SC3076
Szczegółowy opis  Power Amplifier Applications Power Switching Applications
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC3076 Arkusz danych(HTML) 1 Page - Toshiba Semiconductor

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2SC3076
2005-02-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3076
Power Amplifier Applications
Power Switching Applications
• Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
• Excellent switching time: tstg = 1.0 µs (typ.)
• Complementary to 2SA1241
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
2
A
Base current
IB
1
A
Ta = 25°C
1.0
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)


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