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BC807-16 Arkusz danych(PDF) 1 Page - Diodes Incorporated

Numer części BC807-16
Szczegółowy opis  PNP SURFACE MOUNT TRANSISTOR
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Producent  DIODES [Diodes Incorporated]
Strona internetowa  http://www.diodes.com
Logo DIODES - Diodes Incorporated

BC807-16 Arkusz danych(HTML) 1 Page - Diodes Incorporated

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BC807-16/ -25/ -40
PNP SURFACE MOUNT TRANSISTOR
Features
Ideally Suited for Automatic Insertion
Epitaxial Planar Die Construction
For Switching, AF Driver and Amplifier Applications
Complementary NPN Types Available (BC817)
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
DS11208 Rev. 17 - 2
1 of 3
www.diodes.com
BC807-16/-25/-40
© Diodes Incorporated
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe)
Pin Connections: See Diagram
Ordering Information: See Page 3
Marking Information: See Page 3
- BC807-16 5A, K5A
- BC807-25 5B, K5B
- BC807-40 5C, K5C
Weight: 0.008 grams (approximate)
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
α
0
°
8
°
All Dimens
mm
ions in
A
E
J
L
TOP VIEW
M
Maximum Ratings @T
A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
-45
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current
IC
-500
mA
Peak Collector Current
ICM
-1000
mA
Peak Emitter Current
IEM
-1000
mA
Power Dissipation at TSB = 50°C (Note 1)
Pd
310
mW
Thermal Resistance, Junction to Substrate Backside (Note 1)
RθJSB
320
°C/W
Thermal Resistance, Junction to Ambient Air (Note 1)
RθJA
403
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Electrical Characteristics @T
A = 25°C unless otherwise specified
Characteristic (Note 2)
Symbol
Min
Typ
Max
Unit
Test Condition
DC Current Gain
Current Gain Group -16
-25
-40
Current Gain Group -16
-25
-40
hFE
100
160
250
60
100
170
250
400
600
VCE = -1.0V, IC = -100mA
VCE = -1.0V, IC = -300mA
Collector-Emitter Saturation Voltage
VCE(SAT)
-0.7
V
IC = -500mA, IB = -50mA
Base-Emitter Voltage
VBE
-1.2
V
VCE = -1.0V, IC = -300mA
Collector-Emitter Cutoff Current
ICES
-100
-5.0
nA
µA
VCE = -45V
VCE = -25V, Tj = 150°C
Emitter-Base Cutoff Current
IEBO
-100
nA
VEB = -4.0V
Gain Bandwidth Product
fT
100
MHz
VCE = -5.0V, IC = -10mA,
f = 50MHz
Collector-Base Capacitance
CCBO
12
pF
VCB = -10V, f = 1.0MHz
Notes:
1.
Device mounted on ceramic substrate 0.7mm; 2.5cm
2 area.
2.
Short duration pulse test used to minimize self-heating effect.
3.
No purposefully added lead. Halogen and Antimony Free.
4.
Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
E
B
C
B
C
H
G
D
K
C
B
E
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