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Zakładka z wyszukiwarką danych komponentów |
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BAS116T Arkusz danych(PDF) 1 Page - Diodes Incorporated |
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BAS116T Arkusz danych(HTML) 1 Page - Diodes Incorporated |
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1 / 3 page  BAS116T, BAW156T, BAV170T, BAV199T Document number: DS30258 Rev. 12 - 2 1 of 3 www.diodes.com March 2009 © Diodes Incorporated BAS116T, BAW156T, BAV170T, BAV199T SURFACE MOUNT LOW LEAKAGE DIODE Features • Ultra-Small Surface Mount Package • Very Low Leakage Current • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • "Green" Device (Notes 3 and 4) Mechanical Data • Case: SOT-523 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). • Polarity: See Diagrams Below • Marking Information: See Diagrams Below and Page 3 • Ordering Information: See Page 2 • Weight: 0.002 grams (approximate) Top View BAS116T Marking: 50 BAW156T Marking: 53 BAV170T Marking: 51 BAV199T Marking: 52 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 85 V RMS Reverse Voltage VR(RMS) 60 V Forward Continuous Current (Note 1) Single Diode Double Diode IFM 215 125 mA Repetitive Peak Forward Current IFRM 500 mA Non-Repetitive Peak Forward Surge Current @ t = 1.0 μs @ t = 1.0ms @ t = 1.0s IFSM 4.0 1.0 0.5 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 1) PD 150 mW Thermal Resistance Junction to Ambient Air (Note 1) RθJA 833 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 5) V(BR)R 85 ⎯ ⎯ V IR = 100μA Forward Voltage VF ⎯ ⎯ 0.90 1.0 1.1 1.25 V IF = 1.0mA IF = 10mA IF = 50mA IF = 150mA Leakage Current (Note 5) IR ⎯ ⎯ 5.0 80 nA nA VR = 75V VR = 75V, Tj = 150°C Total Capacitance CT ⎯ 2 ⎯ pF VR = 0, f = 1.0MHz Reverse Recovery Time trr ⎯ ⎯ 3.0 μs IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 5. Short duration pulse test used to minimize self-heating effect. SOT-523 Please click here to visit our online spice models database. |
Podobny numer części - BAS116T_09 |
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Podobny opis - BAS116T_09 |
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