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LC72707E Arkusz danych(PDF) 2 Page - Sanyo Semicon Device

Numer części LC72707E
Szczegółowy opis  FM Multiplex Receiver IC Supporting All Worldwide Standards
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Producent  SANYO [Sanyo Semicon Device]
Strona internetowa  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

LC72707E Arkusz danych(HTML) 2 Page - Sanyo Semicon Device

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No. 5970-2/15
LC72707E
Parameter
Symbol
Conditions
Ratings
Unit
Maximum supply voltage
VDD max
–0.3 to +7.0
V
Input voltage
VIN1
CE, CL, DI, RST, STNBY
–0.3 to +7.0
V
VIN2
Pins other than VIN1
–0.3 to VDD +0.3
V
Output voltage
VOUT1
DO
–0.3 to +7.0
V
VOUT2
Pins other than VOUT1
–0.3 to VDD +0.3
V
Output current
IOUT
BLOCK, FLOCK, DO
0 to 4.0
mA
Allowable power dissipation
Pd max
Ta
≤ 85°C
400
mW
Operating temperature
Topr
–40 to +85
°C
Storage temperature
Tstg
–55 to +125
°C
Specifications
Absolute Maximum Ratings at Ta = 25°C, VSS = 0 V
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Supply voltage
VDD
2.7
5.5
V
Input high-level voltage
VIH1
CL, CE, DI, RST, STNBY
0.7 VDD
5.5
V
VIH2
MSK
0.7 VDD
VDD
V
Input low-level voltage
VIL1
Applies to the same pins as VIH1
VSS
0.3 VDD
V
VIL2
Applies to the same pins as VIH2
VSS
0.3 VDD
V
Oscillator frequency
FOSC
This IC operates at frequencies within a
7.2
MHz
±250 ppm precision.
With a capacitance-coupled sine wave input
VXI
to XIN
400
1500
mVrms
Input sensitivity
VDD = +4.5 V to 5.5 V
With a capacitance-coupled sine wave input
VXI
to XIN
400
900
mVrms
VDD = +2.7 V to 3.6 V
[Serial I/O*]
Clock low-level time
tCL
CL
0.7
µs
Clock high-level time
tCH
CL
0.7
µs
Data setup time
tSU
CL, DI
0.7
µs
Data hold time
tHD
CL, DI
0.7
µs
CE wait time
tEL
CL, CE
0.7
µs
CE setup time
tES
CL, CE
0.7
µs
CE hold time
tEH
CL, CE
0.7
µs
Data latch change time
tLC
CE
0.7
µs
Data output time
tDD0
DO, CL
277
555
ns
Layer 4 CRC change time
tCRC
CRC4, CL
0.7
µs
Allowable Operating Ranges at Ta = –40 to 85°C, VSS = 0 V
Note *: See the serial data timing chart.
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
VOH1
IO = 1 mA, FLICK
VDD – 1.0
V
Output high-level voltage
VOH2
IO = 2 mA, BLOCK, FLOCK, INT, CLK16,
VDD – 0.4
V
DATA
VOL1
IO = 1 mA, applies to the same pins as VOH1
1.0
V
Output low-level voltage
VOL2
IO = 2 mA, applies to the same pins as VOH2
0.4
V
VOL3
IO = 2 mA, DO
0.4
V
Input high-level current
IIH1
VIN = 5.5 V, CE, CL, DI, RST, STNBY
1.0
µA
IIH2
VIN = VDD, input pins other than IIH1
1.0
µA
Input low-level current
IIL
VIN = VSS, MSK, CL, CE, DI, RST, STNBY,
–1
µA
TP0 to TP8, TPC1 to 2, TOSEL1 to 2, TEST
Output off leakage current
IOFF
VO = VDD, DO
5
µA
Hysteresis voltage
VHIS
MSK, CL, CE, DI, RST, STNBY
0.1 VDD
V
Internal feedback resistor
Rf
XIN, XOUT
1.0
M
Current drain
IDD
16
25
mA
Electrical Characteristics (1) at VDD = +4.5 to +5.5 V, in the allowable operating ranges


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