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2SD1223 Arkusz danych(PDF) 1 Page - Toshiba Semiconductor |
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2SD1223 Arkusz danych(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SD1223 2010-02-05 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) • Complementary to 2SB908. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 4 A Base current IB 0.4 A Ta = 25°C 1.0 Collector power dissipation Tc = 25°C PC 15 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) BASE EMITTER ≈ 4.5 kΩ ≈ 300 Ω COLLECTOR |
Podobny numer części - 2SD1223 |
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Podobny opis - 2SD1223 |
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