2SD1223

2010-02-05

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington)

2SD1223

Switching Applications

Hammer Drive, Pulse Motor Drive Applications

Power Amplifier Applications

• Complementary to 2SB908.

Characteristics

Symbol

Rating

Unit

Collector-base voltage

100

V

Collector-emitter voltage

80

V

Emitter-base voltage

5

V

Collector current

4

A

Base current

0.4

A

Ta = 25°C

1.0

Collector power

dissipation

Tc = 25°C

15

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Equivalent Circuit

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-7J1A

Weight: 0.36 g (typ.)

BASE

EMITTER

≈ 4.5 kΩ

≈ 300 Ω

COLLECTOR