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2SD1409A Arkusz danych(PDF) 2 Page - Toshiba Semiconductor

Numer części 2SD1409A
Szczegółowy opis  High Voltage Switching Applications
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SD1409A Arkusz danych(HTML) 2 Page - Toshiba Semiconductor

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2SD1409A
2009-12-21
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 600 V, IE = 0
0.5
mA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
3
mA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
400
V
hFE (1)
VCE = 2 V, IC = 2 A
600
DC current gain
hFE (2)
VCE = 2 V, IC = 4 A
100
Collector-emitter saturation voltage
VCE (sat)
IC = 4 A, IB = 0.04 A
2.0
V
Base-emitter saturation voltage
VBE (sat)
IC = 4 A, IB = 0.04 A
2.5
V
Emitter-collector forward voltage
VECF
IE = 4 A, IB = 0
3.0
V
Collector output capacitance
Cob
VCB = 50 V, IE = 0, f = 1 MHz
35
pF
Turn-on time
ton
1
Storage time
tstg
8
Switching time
Fall time
tf
IB1 = 0.04 A,IB2 = 0.04 A
duty cycle ≤ 1%
5
μs
Marking
Note2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
Lot No.
Note2
D1409A
Part No. (or abbreviation code)
20 μs
VCC = 100 V
Output
IB2
IB1
Input


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