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2SD1525 Arkusz danych(PDF) 2 Page - Toshiba Semiconductor

Numer części 2SD1525
Szczegółowy opis  High Current Switching Applications
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SD1525 Arkusz danych(HTML) 2 Page - Toshiba Semiconductor

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2SD1525
2009-08-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 100 V, IE = 0
100
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
10
mA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
100
V
hFE (1)
VCE = 5 V, IC = 20 A
1000
DC current gain
hFE (2)
VCE = 5 V, IC = 30 A
200
Collector-emitter saturation voltage
VCE (sat)
1.5
V
Base-emitter saturation voltage
VBE (sat)
IC = 20 A, IB = 0.2 A
2.5
V
Emitter-collector forward voltage
VECF
IE = 10 A, IB = 0
3
V
Transition frequency
fT
VCE = 5 V, IC = 1 A
10
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
500
pF
Turn-on time
ton
1.5
Storage time
tstg
10
Switching time
Fall time
tf
IB1 = 0.01 A
IB2 = 0.01 A
duty cycle ≤ 1%
1.5
μs
Marking
Note: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
Out-
put
Input
VCC = 50 V
IB1
IB2
20 μs
2SD1525
TOSHIBA
JAPAN
Lot No.
Note
Part No. (or abbreviation code)


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