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2SD2012 Arkusz danych(PDF) 2 Page - Toshiba Semiconductor

Numer części 2SD2012
Szczegółowy opis  Audio Frequency Power Amplifier Applications
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SD2012 Arkusz danych(HTML) 2 Page - Toshiba Semiconductor

  2SD2012_09 Datasheet HTML 1Page - Toshiba Semiconductor 2SD2012_09 Datasheet HTML 2Page - Toshiba Semiconductor 2SD2012_09 Datasheet HTML 3Page - Toshiba Semiconductor 2SD2012_09 Datasheet HTML 4Page - Toshiba Semiconductor 2SD2012_09 Datasheet HTML 5Page - Toshiba Semiconductor  
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2SD2012
2009-12-01
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 60 V, IE = 0
100
μA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
100
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
60
V
hFE (1)
VCE = 5 V, IC = 0.5 A
100
320
DC current gain
hFE (2)
VCE = 5 V, IC = 2 A
20
Collector-emitter saturation voltage
VCE (sat)
IC = 2 A, IB = 0.2 A
0.4
1.0
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 0.5 A
0.75
1.0
V
Transition frequency
fT
VCE = 5 V, IC = 0.5 A
3
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
35
pF
Marking
Note 2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
Lot No.
Note 2
D2012
Part No. (or abbreviation code)


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