2N3960 datasheet(2/4 Pages) MICROSEMI

Numer części	2N3960

Szczegółowy opis	NPN SILICON SWITCHING TRANSISTOR

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Producent	MICROSEMI [Microsemi Corporation]

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

T4-LDS-0161 Rev. 1 (100514)

Page 2 of 4

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

ON CHARACTERISTICS

Forward-Current Transfer Ratio

IC = 1mAdc, VCE = 1Vdc

40

IC = 10mAdc, VCE = 1Vdc

60

300

IC = 30mAdc, VCE = 1Vdc

hFE

30

Collector-Emitter Saturation Voltage

IC = 1.0mAdc, IB = 0.1mAdc

IC = 30mAdc, IB = 3.0mAdc

VCE(sat)

0.2

0.3

Vdc

Base-Emitter Saturation Voltage

VCE = 1.0Vdc, IC = 1.0mAdc

VCE = 1.0Vdc, IC = 3.0mAdc

VBE(sat)

0.8

1.0

Vdc

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Magnitude of Small – Signal Short – Circuit - Forward Current Transfer

Ratio

IC = 5.0mAdc, VCE = 4Vdc, f = 100MHz

IC = 10.0mAdc, VCE = 4Vdc, f = 100MHz

IC = 30.0mAdc, VCE = 4Vdc, f = 100MHz

|hfe|

13

14

12

Output Capacitance

VCB = 4Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz

Cobo

2.5

pF

Input Capacitance

VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz

Cibo

2.5

pF

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