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LC78211 Arkusz danych(PDF) 3 Page - Sanyo Semicon Device |
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LC78211 Arkusz danych(HTML) 3 Page - Sanyo Semicon Device |
3 / 6 page Electrical Characteristics at Ta = 25°C, VSS = 0 V Equivalent Circuit Block Diagrams No. 4817-3/6 LC78211, 78212, 78213 Parameter Symbol Conditions min typ max Unit I = 1 mA, VDD – VEE = 12 V: RON1 L1 to L8, R1 to R8, LCOM1 to LCOM4, 150 Ω Analog switch on resistance RCOM1 to RCOM4 I = 1 mA, VDD – VEE = 37 V: RON2 L1 to L8, R1 to R8, LCOM1 to LCOM4, 70 Ω RCOM1 to RCOM4 VIN = 1 Vrms, f = 1 kHz, VDD – VEE = 37 V: THD1 L1 to L8, R1 to R8, LCOM1 to LCOM4, 0.0015 0.01 % Total harmonic distortion RCOM1 to RCOM4 VIN = 0.1 Vrms, f = 1 kHz, VDD – VEE = 37 V: THD2 L1 to L8, R1 to R8, LCOM1 to LCOM4, 0.01 0.05 % RCOM1 to RCOM4 VIN = 0 dBV, f = 10 kHz, VDD – VEE = 37 V: Feedthrough FTH L1 to L8, R1 to R8, LCOM1 to LCOM4, 55 dB RCOM1 to RCOM4 VIN = 0 dBV, f = 10 kHz, VDD – VEE = 37 V: Crosstalk CT L1 to L8, R1 to R8, LCOM1 to LCOM4, 75 dB RCOM1 to RCOM4 Input high level current IIH VI = 18.5 V: DI, CL, CE, S, RES +10 µA Input low level current IIL VI = 0 V: DI, CL, CE, S, RES –10 µA Analog switch leakage current VI = VEE to VEE + 37 V: (off state) IOFF L1 to L8, R1 to R8, LCOM1 to LCOM4, –10 +10 µA RCOM1 to RCOM4 Current drain IDD VDD 1.0 mA Continued on next page. |
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